An Interesting Poster to look at from the Tri Alpha Energy Team in California
P. 1
EFFECT OF ELECTRODE BIASING ON C-2W ELECTRON TEMPERATURE
1,2,* 1 1 1 1
Manjit Kaur , Peter Yushmanov , Vladimir Sokolov , Kan Zhai , James Sweeney and TAE Team
1TAE Technologies, Inc., 19631 Pauling, Foothill Ranch, CA 92610, 2University of California Irvine, Irvine, CA 92697 *mkaur@tae.com
ABSTRACT
In TAE Technologiesβ current experimental device, C-2W (also called βNormanβ) [1], record-breaking,
advanced beam-driven field reversed configuration (FRC) plasmas are produced. FRCs are sustained
in the central confinement vessel (CV) in the steady state utilizing variable energy neutral beams,
advanced divertors, end bias electrodes, and an active plasma control system. In this presentation, we
study the effect of end electrode bias both under steady-state and transient conditions on the e-
temperature (π ) measured using a Thomson scattering diagnostic in the mid-plane of CV. The steady- π
state analysis allows distinguishing between the effects of bias voltage versus current. Dynamic bias allows measuring π rise/decay rates and thus makes it possible to analyze the effect of bias on e-
confinement. The effectiveness of biasing β fraction of current and voltage delivered to CV β is
analyzed using a single-sided bias where electrodes on the opposite end act as floating electrostatic
probes. A strong correlation of π with the bias is observed, which might be an indication of e- heating
by the applied bias.
π
π
[1] H. Gota et al., Nucl. Fusion 59, 112009 (2019).
ELECTRON HEATING
ο A common assumption about electron heating in mirror devices with NB heating is that electrons are heated by accumulated fast ions as fast ions mostly transfer energy to electrons.
ο We have experimentally observed a strong correlation between biasing and π»π, which may suggest that our understanding of electron heating by fast ions alone is incomplete.
ο Electrode biasing is a high power source (a few MW in C-2W), which may play many roles in plasma discharges:
ο Does biasing cause an improvement in electron confinement or heating?
ο If it is electron heating, then is it through
ο effect of bias on fast ions?
ο heating by bias-induced plasma rotation? ο direct bias heating (voltage or current)?
PROBABLE HEATING MECHANISMS
A. Coulomb heating from ions: Heating from fast and warm ions.
(π»ππππ βπ»π) πππππ,π
(π» βππ» ) π» π·π,π~ πππ π ~ π
πππ ππ¬π
(π» βπ» )
π·πππ,π~ π π ,π·πππππ,π~ πππ
Thermal ion heating
Fast ion heating
Total heating due to ions For details, see poster by Erik Trask, UP10.00125
B. Rotational heating:
ο Biasing drives plasma rotation via π± Γ π© force which is balanced by azimuthal friction. This friction may lead to plasma heating (plasma rotation is an indication of a radial electric field) β βperpendicular resistive heatingβ.
ο Azimuthal friction between ions and electrons leads to Ohmic heating of electrons.
βΌ
Can biasing directly affect electrons? C. Electrostatic heating:
Secondary electrons from electrode surface may gain high energy in the Debye sheath and equilibrate with thermal electrons.
D. Improved electron confinement:
ππ»π ππ
ο Increase in π½ may act as a deeper potential well for e-, π©πππ
hence, better confinement.
Both above effects should be visible in π»π at a fast time scale.
Which one of the above mechanisms is responsible for observed rise in π»π?
ππ¬ππ,π ππ
π·π―ππππππ ππ
π»π ππ¬π
=
ο Increase in π»π may be due to increase in π·π―ππππππ or reduction
= π·π―ππππππ β π·ππππ Φ in π·ππππ (i.e., improvement in ππ¬π).
β
DYNAMIC ANALYSIS
π π
ππ
A fast increase in
π½π©πππ, βπ· β ππ΄πΎ
π»π increased from ~180 to ~280 eV, Heating power β π.ππ΄πΎ
Flat density
Flat π»πππ No change in
rotation
Size of plasma stays same for > ππππ
Faster rise in diamagnetic energy
ο Fast increase in π½π©πππ results in a fast rise in π»π.
ο Observed change in heating power is β ππ% of applied βπ·π©πππ.
ο Direct Indication of non-ion-induced heating.
ο Total temperature and ion rotation remain same.
SUMMARY
οΌ NB-driven FRC plasmas stay in a steady-state for long time and allow a thorough study of electron heating mechanisms.
οΌ Core plasma π»π shows a strong correlation with π½π©πππ in the steady- states.
οΌ In dynamic studies, a fast ramp in π½π©πππ is accompanied by a fast rise in γπ»πγ, whereas π»πππ , π°π©πππ and ππππ,π remain same. This indicates that π½π©πππ is directly affecting γπ»πγ.
οΌ Improvement in γπ»πγ with π½π©πππ may be a combined effect of additional heating and improved electron confinement.
Future Plans:
ο Design & perform experiments to distinguish the effect of bias voltage β Heating versus Improvement in confinement?
C-2W DEVICE & DIAGNOSTICS
Thomson scattering diagnostics
οΆ In the C-2W[1] device, we generate field-reversed configuration (FRC) plasma and heat it with 8 neutral beams at two axial locations in the confinement vessel (CV). Edge biasing is applied to stabilize the highβπ· plasma.
οΆ The core FRC is surrounded by scrape-off-layer (SOL) & plasma edge (halo plasma).
οΆ Open magnetic field lines allow SOL exhaust to be collected outside CV on the divertor electrodes.
οΆ The halo plasma does not make it through mirror region and terminates on CV wall
MAIN DIAGNOSTICS
οΆ Thomson scattering diagnostic in the CV at 16 radial locations in the mid plane. Temporal resolution of π ππ―π for 30 pulses + 6 pulses at ππ ππ―π. Capable of measuringdensity:ππππ βππππππβπ,π»π:ππππ½βππππ½.
οΆ Thomson scattering diagnostic at 5 radial locations in the open field region (jet region). Temporal resolution of πππ π―π.
STEADY-STATE ANALYSIS
o Clear increase in γπ»πγ in the confinement vessel (& jet region) with an increase in the edge biasing voltage (π½π©πππ).
o Increase in electrode/biasing current (π°π©πππ) does not lead to an increase in γπ»πγ.
o No clear change in γπ»πγ with π·π©πππ.
Strong correlation of γπ»πγ with π½π©πππ but not with π·π©πππ. Does it indicate improvement in confinement?
CRITERIA FOR STEADY STATES
ο Determine time intervals (β₯ π. π ππ) with constant (within ππ%):
ο πΉπ (> ππ ππ)
ο Elongation
ο Thermal energy
ο Determine average plasma parameters (inside πΉπ) for these time intervals.
ο Identified ~300 steady state events, π. π β ππ ππ long